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flash memory 1 advance k9f4g08u0m k9k8g08u1m document title 512m x 8 bits / 1g x 8 bits nand flash memory revision history the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to change the specifications. samsung elec tronics will evaluate and reply to your requests and questions about device. if you h ave any questions, please contact the samsung branch office near your office. revision no 0.0 remark advance history 1. initial issue draft date nov. 15. 2004
flash memory 2 advance k9f4g08u0m k9k8g08u1m general description features ? voltage supply - 2.70v ~ 3.60v ? organization - memory cell array : (512m + 16,384k)bit x 8bit - data register : (2k + 64)bit x 8bit ? automatic program and erase - page program : (2k + 64)byte - block erase : (128k + 4k)byte ? page read operation - page size : (2k + 64)byte - random read : 20 s(max.) - serial access : 25ns(min.) 512m x 8 bit / 1g x 8 bits nand flash memory ? fast write cycle time - page program time : 200 s(typ.) - block erase time : 1.5ms(typ.) ? command/address/data multiplexed i/o port ? hardware data protection - program/erase lockout during power transitions ? reliable cmos floating-gate technology - endurance : 100k program/erase cycles - data retention : 10 years ? command driven operation ? intelligent copy-back with internal 1bit/528byte edc ? unique id for copyright protection ? package : - k9f4g08u0m-ycb0/yib0 48 - pin tsop i (12 x 20 / 0.5 mm pitch) - k9f4g08u0m-pcb0/pib0 : pb-free package 48 - pin tsop i (12 x 20 / 0.5 mm pitch) - k9f4g08u0m-icb0/iib0 52 - pin ulga (12 x 17 / 1.00 mm pitch) - k9k8g08u1m-icb0/iib0 52 - pin ulga (12 x 17 / 1.00 mm pitch) offered in 512mx8bit, the k9f4g08u0m is a 4g-bit nand flash memo ry with spare 128m-bit. its nand cell provides the most cost- effective solution for the solid state application marke t. a program operation can be performed in typical 200 s on the (2k+64)byte page and an erase operation can be performed in typical 1.5ms on a (128k+4k)byte block. data in the data page can be read out a t 25ns cycle time per byte. the i/o pins serve as the ports fo r address and data input/output as well as command input. the on-ch ip write controller automates all program and erase functions including pulse repetition, where required, and internal verificatio n and margining of data. even the write-intensive systems can take advantage of the k9f4g08u0m s extended reliability of 100k program/ erase cycles by providing ecc(error correcting code) with real time mapping-out algorithm. the k9f4g08u0m is an optimum solu- tion for large nonvolatile storage applicati ons such as solid state file storage and other portable applications requiring non- v o l a t i l i t y. product list part number vcc range organization pkg type k9f4g08u0m-y,p 2.70 ~ 3.60v x8 tsop1 k9f4g08u0m-i 52ulga k9k8g08u1m-i
flash memory 3 advance k9f4g08u0m k9k8g08u1m pin configuration (tsop1) k9f4g08u0m-ycb0,pcb0/yib0,pib0 package dimensions 48-pin lead/lead free plastic thin small out-line package type(i) 48 - tsop1 - 1220f unit :mm/inch 0.787 0.008 20.00 0.20 #1 #24 0.20 +0.07 -0.03 0.008 +0.003 -0.001 0.50 0.0197 #48 #25 0.488 12.40 max 12.00 0.472 0.10 0.004 max 0.25 0.010 () 0.039 0.002 1.00 0.05 0.002 0.05 min 0.047 1.20 max 0.45~0.75 0.018~0.030 0.724 0.004 18.40 0.10 0~8 0.010 0.25 typ 0.125 +0.075 0.035 0.005 +0.003 -0.001 0.50 0.020 () 48-pin tsop1 standard type 12mm x 20mm 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 n.c n.c n.c n.c n.c n.c r/b re ce n.c n.c vcc vss n.c n.c cle ale we wp n.c n.c n.c n.c n.c n.c n.c n.c n.c i/o7 i/o6 i/o5 i/o4 n.c n.c n.c vcc vss n.c n.c n.c i/o3 i/o2 i/o1 i/o0 n.c n.c n.c n.c
flash memory 4 advance k9f4g08u0m k9k8g08u1m 1.00 1.00 1.00 1.00 2.00 7 6 5 4 3 2 1 1.00 1.00 1.00 12.00 0.10 #a1 17.00 0.10 17.00 0.10 b a 12.00 0.10 (datum b) (datum a) 12.0 0 10.00 2.50 2.50 2.00 0.50 1.30 a b c d e f g h j k l m n 12- ? 1.00 0.05 41- ? 0.70 0.05 side view 0.65 ( max .) 0.10 c 17.00 0.10 top view bottom view ab c d e f g h j k l m n 7 6 5 4 3 2 1 pin configuration (ulga) k9f4g08u0m-icb0/iib0 52-ulga (measured in millimeters) nc nc nc nc nc nc nc nc nc nc nc nc nc nc nc nc vcc vcc vss vss vss /re nc /ce nc cle nc ale nc /we nc /wp nc r/b nc vss io0 nc io1 nc io2 io3 nc nc io4 nc io5 nc io6 nc io7 nc ? ab c m 0.1 ? ab c m 0.1 package dimensions
flash memory 5 advance k9f4g08u0m k9k8g08u1m 1.00 1.00 1.00 1.00 2.00 7 6 5 4 3 2 1 1.00 1.00 1.00 12.00 0.10 #a1 17.00 0.10 17.00 0.10 b a 12.00 0.10 (datum b) (datum a) 12.0 0 10.00 2.50 2.50 2.00 0.50 1.30 a b c d e f g h j k l m n 12- ? 1.00 0.05 41- ? 0.70 0.05 side view 0.65 ( max .) 0.10 c 17.00 0.10 top view bottom view ab c d e f g h j k l m n 7 6 5 4 3 2 1 k9k8g08u1m-icb0/iib0 52-ulga (measured in millimeters) nc nc nc nc nc nc nc nc nc nc nc nc nc nc nc nc vcc vcc vss vss vss /re1 /re2 /ce1 /ce2 cle1 cle2 ale1 ale2 /we1 /we2 /wp1 /wp2 r/b1 r/b2 vss io0-1 io0-2 io1-1 io1-2 io2-1 io3-1 io2-2 io3-2 io4-1 io4-2 io5-1 io5-2 io6-1 io6-2 io7-1 io7-2 ? ab c m 0.1 ? ab c m 0.1 package dimensions
flash memory 6 advance k9f4g08u0m k9k8g08u1m pin description note : connect all v cc and v ss pins of each device to common power supply outputs. do not leave v cc or v ss disconnected. pin name pin function i/o 0 ~ i/o 7 data inputs/outputs the i/o pins are used to input command, address and dat a, and to output data during read operations. the i/ o pins float to high-z when the chip is des elected or when the outputs are disabled. cle command latch enable the cle input controls the activating path for comm ands sent to the command register. when active high, commands are latched into the command register through the i/o ports on the rising edge of the we signal. ale address latch enable the ale input controls the activating path for addres s to the internal address registers. addresses are latched on the rising edge of we with ale high. ce chip enable the ce input is the device selection control. when the device is in the busy state, ce high is ignored, and the device does not return to standby mode in program or erase operation. re read enable the re input is the serial data-out control, and when active drives the data onto t he i/o bus. data is valid trea after the falling edge of re which also increments the internal column address counter by one. we write enable the we input controls writes to the i/o port. commands , address and data are latched on the rising edge of the we pulse. wp write protect the wp pin provides inadvertent program/erase protecti on during power transitions. the internal high volt- age generator is reset when the wp pin is active low. r/b ready/busy output the r/b output indicates the status of the device operation. when low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. it is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled. vcc power v cc is the power supply for device. vss ground n.c no connection lead is not internally connected.
flash memory 7 advance k9f4g08u0m k9k8g08u1m 2k bytes 64 bytes figure 1. k9f4g08u0m functional block diagram figure 2. k9f4g08u0m array organization note : column address : starting address of the register. * l must be set to "low". * the device ignores any additional input of address cycles than reguired. i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 1st cycle a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 2nd cycle a 8 a 9 a 10 a 11 *l *l *l *l 3rd cycle a 12 a 13 a 14 a 15 a 16 a 17 a 18 a 19 4th cycle a 20 a 21 a 22 a 23 a 24 a 25 a 26 a 27 5th cycle a 28 a 29 *l *l *l *l *l *l v cc x-buffers command i/o buffers & latches latches & decoders y-buffers latches & decoders register control logic & high voltage generator global buffers output driver v ss a 12 - a 29 a 0 - a 11 command ce re we cle wp i/0 0 i/0 7 v cc v ss 256k pages (=4,096 blocks) 2k bytes 8 bit 64 bytes 1 block = 64 pages (128k + 4k) byte i/o 0 ~ i/o 7 1 page = (2k + 64)bytes 1 block = (2k + 64)b x 64 pages = (128k + 4k) bytes 1 device = (2k+64)b x 64pages x 4,096 blocks = 4,224 mbits row address page register ale 4,096m + 128m bit nand flash array (2,048 + 64)byte x 262,144 y-gating row address column address column address row address data register & s/a
flash memory 8 advance k9f4g08u0m k9k8g08u1m product introduction the k9f4g08u0m is a 4,224mbit(4,429,185,024 bit) memory organi zed as 262,144 rows(pages) by 2,112x8 columns. spare 64x8 columns are located from column address of 2,048~2,111. a 2,112-by te data register is connected to memory cell arrays accommo- dating data transfer between the i/o buffers and memory during page read and page program operations. the memory array is made up of 32 cells that are serially connected to form a nand struct ure. each of the 32 cells resides in a different page. a block consists of two nand structured strings. a nand structure consists of 32 ce lls. total 1,081,344 nand cells reside in a block. the progra m and read operations are executed on a page bas is, while the erase operati on is executed on a block basis. the memory array con- sists of 4,096 separately erasable 128k-byte blocks. it indicate s that the bit by bit erase operation is prohibited on the k9f4 g08u0m. the k9f4g08u0m has addresses multiplexed into 8 i/os. this scheme dramatically reduces pi n counts and allows system upgrades to future densities by maintaining cons istency in system board design. command, address and data are all written through i/o's by bringing we to low while ce is low. those are latched on the rising edge of we . command latch enable(cle) and address latch enable(ale) are used to multiplex command and address respectively , via the i/o pins. some commands require one bus cycle. for example, reset command, status read command, etc require just one cycle bus. some other commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execution. the 528m byte physical space requires 30 addresses, thereby requiring five cy cles for addressing : 2 cycles of column address, 3 cycles of row address, in t hat order. page read and page program need the same five address cycl es following the required comm and input. in block erase oper- ation, however, only the three row address cycles are used. device operations are selected by writing specific commands into th e command register. table 1 defines the specific commands of the k9f4g08u0m. in addition to the enhanced architecture and interface, the devic e incorporates copy-back program feature from one page to anot her page without need for transporting the data to and from the exter nal buffer memory. since the time-consuming serial access and data-input cycles are removed, system performance for solid-state disk application is significantly increased. table 1. command sets note : 1. random data input/output can be executed in a page. 2. read edc status is only available on copy back operation. caution : any undefined command inputs are prohibited except for above command set of table 1. function 1st. cycle 2nd. cycle acceptable command during busy read 00h 30h read for copy back 00h 35h read id 90h - reset ffh - o page program 80h 10h two-plane page program 80h---11h 81h---10h copy-back program 85h 10h two-plane copy-back program 85h---11h 81h---10h block erase 60h d0h two-plane block erase 60h---60h d0h random data input (1) 85h - random data output (1) 05h e0h read status 70h o read edc status (2) 7bh o
flash memory 9 advance k9f4g08u0m k9k8g08u1m dc and operating characteristics (recommended operating cond itions otherwise noted.) note : 1. v il can undershoot to -0.4v and v ih can overshoot to v cc +0.4v for durations of 20 ns or less. 2. typical value is measured at vcc=3.3v, t a =25 c. not 100% tested. parameter symbol test conditions min typ max unit operating current page read with serial access i cc 1 trc=25ns ce =v il, i out =0ma -1530 ma program i cc 2- erase i cc 3- stand-by current(ttl) i sb 1ce =v ih , wp =0v/v cc --1 stand-by current(cmos) i sb 2ce =v cc -0.2, wp =0v/v cc -1050 a input leakage current i li v in =0 to vcc(max) - - 10 output leakage current i lo v out =0 to vcc(max) - - 10 input high voltage v ih* - 0.8xvcc - vcc+0.3 v input low voltage, all inputs v il* - -0.3 - 0.2xvcc output high voltage level v oh k9f4g08u0m :i oh =-400 a2.4 - - output low voltage level v ol k9f4g08u0m :i ol =2.1ma - - 0.4 output low current(r/b )i ol (r/b ) k9f4g08u0m :v ol =0.4v 8 10 - ma recommended operating conditions (voltage reference to gnd, k9f4g08u0m-xcb0 : t a =0 to 70 c, k9f4g08u0m-xib0 : t a =-40 to 85 c) parameter symbol min typ. max unit supply voltage v cc 2.7 3.3 3.6 v supply voltage v ss 000v absolute maximum ratings note : 1. minimum dc voltage is -0.6v on input/output pins. during transit ions, this level may undershoot to -2.0v for periods <30ns. maximum dc voltage on input/output pins is v cc +0.3v which, during transitions, may overshoot to v cc +2.0v for periods <20ns. 2. permanent device damage may occur if absolute maximum rating s are exceeded. functional operation should be restricted to the conditions as detailed in the operational sections of this data shee t. exposure to absolute maximum rating conditions for extended peri ods may affect reliability. parameter symbol rating unit voltage on any pin relative to vss v in/out -0.6 to +4.6 v v cc/ v ccq -0.6 to +4.6 temperature under bias k9f4g08u0m-xcb0 t bias -10 to +125 c k9f4g08u0m-xib0 -40 to +125 storage temperature k9f4g08u0m-xcb0 t stg -65 to +150 c k9f4g08u0m-xib0 short circuit current i os 5ma
flash memory 10 advance k9f4g08u0m k9k8g08u1m capacitance ( t a =25 c, v cc =3.3v, f=1.0mhz) note : capacitance is periodica lly sampled and not 100% tested. item symbol test condition min max unit input/output capacitance c i/o v il =0v - 10 pf input capacitance c in v in =0v - 10 pf valid block note : 1. the device may incl ude invalid blocks when first ship ped. additional invalid blocks may develop while being used. the number of valid blocks is pre- sented with both cases of invalid blocks c onsidered. invalid blocks are defined as blo cks that contain one or more bad bits. do not erase or program factory-marked bad blocks. refer to the attached technical notes for appropriate management of invalid blocks. 2. the 1st block, which is placed on 00h block address, is guaran teed to be a valid block, does not require error correction u p to 1k program/erase cycles. * : each k9f4g08u0m chip in the k9k8g08u1m has maximun 80 invalid block. parameter symbol min typ. max unit k9f4g08u0m n vb 4,016 - 4,096 blocks k9k8g08u1m n vb 8,032* - 8,192* blocks ac test condition (k9f4g08u0m-xcb0 :t a =0 to 70 c, k9f4g08u0m-xib0:t a =-40 to 85 c k9f4g08u0m : vcc=2.7v~3.6v unless otherwise noted) parameter k9f4g08u0m input pulse levels 0v to vcc input rise and fall times 5ns input and output timing levels vcc/2 output load 1 ttl gate and cl=50pf mode selection note : 1. x can be v il or v ih. 2. wp should be biased to cmos high or cmos low for standby. cle ale ce we re wp mode hll hx read mode command input l h l h x address input(5clock) hll hh write mode command input l h l h h address input(5clock) l l l h h data input l l l h x data output x x x x h x during read(busy) xxxxxh during program(busy) xxxxxh during erase(busy) x x (1) x x x l write protect xxhxx 0v/v cc (2) stand-by
flash memory 11 advance k9f4g08u0m k9k8g08u1m ac timing characteristics for command / address / data input notes : 1. the transition of the corresponding control pins must occur only once while we is held low 2. tadl is the time from the we rising edge of final address cycle to the we rising edge of first data cycle parameter symbol min max unit cle setup time t cls (1) 12 - ns cle hold time t clh 5-ns ce setup time t cs (1) 20 - ns ce hold time t ch 5-ns we pulse width t wp 12 - ns ale setup time t als (1) 12 - ns ale hold time t alh 5- ns data setup time t ds (1) 12 - ns data hold time t dh 5-ns write cycle time t wc 25 - ns we high hold time t wh 10 - ns ale to data loading time t adl (2) 70 - ns program / erase characteristics note : 1. typical value is measured at vcc=3.3v, t a =25 c. not 100% tested. 2. typical program time is defined as the time that more than 50% of the whole pages are programmed at vcc of 3.3v and tempera ture of 25 c within. parameter symbol min typ max unit program time t prog (2) - 200 700 s dummy busy time for two-plane page program t dbsy -0.51 s number of partial program cycles in the same page main array nop --4cycles spare array - - 4 cycles block erase time t bers -1.52 ms
flash memory 12 advance k9f4g08u0m k9k8g08u1m ac characteristics for operation note : 1. if reset command(ffh) is written at ready state, the device goes into busy for maximum 5us. parameter symbol min max unit data transfer from cell to register t r -20 s ale to re delay t ar 10 - ns cle to re delay t clr 10 - ns ready to re low t rr 20 - ns re pulse width t rp 12 - ns we high to busy t wb - 100 ns read cycle time t rc 25 - ns re access time t rea -18ns ce access time t cea -23ns re high to output hi-z t rhz - 100 ns ce high to output hi-z t chz -30ns re high to output hold t rhoh 15 - ns re low to output hold t rloh 5- ns ce high to output hold t coh 15 - ns re high hold time t reh 10 - ns output hi-z to re low t ir 0-ns re high to we low t rhw 100 - ns we high to re low t whr 60 - ns device resetting time(read/program/copy-back program/erase) t rst - 5/10/40/500 (1) s
flash memory 13 advance k9f4g08u0m k9k8g08u1m nand flash technical notes identifying initial invalid block(s) initial invalid block(s) initial invalid blocks are defined as blocks that contain one or more initial inva lid bits whose reliability is not guaranteed by samsung. the information regarding the initial invalid block(s) is called the initial invalid block inform ation. devices with initial in valid block(s) have the same quality level as devices with all valid blocks and have the same ac and dc characteristics. an initial invalid bl ock(s) does not affect the performance of valid bl ock(s) because it is isolated from the bi t line and the common source line by a sele ct tran- sistor. the system design must be able to mask out the initial in valid block(s) via address mappi ng. the 1st block, which is pl aced on 00h block address, is guaranteed to be a valid block, does not r equire error correction up to 1k program/erase cycles. all device locations are erased(ffh) except locations where the initial invalid block( s) information is written prior to shippi ng. the ini- tial invalid block(s) status is defined by the 1st byte in t he spare area. samsung makes sure that either the 1st or 2nd page o f every initial invalid block has non-ffh data at the column address of 2048. since the initial invalid block information is also era sable in most cases, it is impossible to recover the information once it has been erased. therefore, the system must be able to recogniz e the initial invalid block(s) based on the original initial invalid block information and create the initial invalid block table via the following suggested flow chart(figure 3). any intentional erasure of t he original initial invalid block information is prohibited. * check "ffh" at the column address 2048 figure 3. flow chart to create initial invalid block table start set block address = 0 check "ffh" increment block address last block ? end no yes yes create (or update) no initial of the 1st and 2nd page in the block invalid block(s) table
flash memory 14 advance k9f4g08u0m k9k8g08u1m nand flash technical notes (continued) program flow chart start i/o 6 = 1 ? i/o 0 = 0 ? no * write 80h write address write data write 10h read status register program completed or r/b = 1 ? program error yes no yes : if program operation r esults in an error, map out the block including the page in error and copy the target data to another block. * error in write or read operation within its life time, additional invalid bl ocks may develop with nand flash memory. refer to the qualification report for the a ctual data.the following possible failure modes shoul d be considered to implement a highly reli able system. in the case of status rea d fail- ure after erase or program, block replac ement should be done. because program status fail during a page program does not affect the data of the other pages in the same block, block replacem ent can be executed with a page-si zed buffer by finding an erased empty block and reprogramming the current target data and copying t he rest of the replaced block. in case of read, ecc must be employed. to improve the efficiency of me mory space, it is recommended that the r ead or verification failure due to single bit error be reclaimed by ecc without any block replac ement. the said additional block failure rate does not include those reclaimed blocks. failure mode detection and countermeasure sequence write erase failure status read after erase --> block replacement program failure status read after program --> block replacement read single bit failure ve rify ecc -> ecc correction ecc : error correcting code --> hamming code etc. example) 1bit correction & 2bit detection
flash memory 15 advance k9f4g08u0m k9k8g08u1m erase flow chart start i/o 6 = 1 ? i/o 0 = 0 ? no * write 60h write block address write d0h read status register or r/b = 1 ? erase error yes no : if erase operation results in an error, map out the failing block and replace it with another block. * erase completed yes read flow chart start verify ecc no write 00h write address read data ecc generation reclaim the error page read completed yes nand flash technical notes (continued) write 30h block replacement * step1 when an error happens in the nth page of the bloc k ?a? during erase or program operation. * step2 copy the data in the 1st ~ (n-1)th page to the same location of another free block. (block ?b?) * step3 then, copy the nth page data of the block ?a? in the buffer memory to the nth page of the block ?b?. * step4 do not erase or program to block ?a? by creating an ?invalid block? table or other appropriate scheme. buffer memory of the controller. 1st block a block b (n-1)th nth (page) { 1st (n-1)th nth (page) { an error occurs. 1 2
flash memory 16 advance k9f4g08u0m k9k8g08u1m nand flash technical notes (continued) copy-back operation with edc & plane definition for edc generally, copy-back program is very powerful to move data stor ed in a page without utilizing any external memory. but, if the source page has a bit error for charge loss or charge gain, accumulated co py-back operations could also accumulate bit errors. for thi s rea- son, two-bit ecc is recomm anded for copy-back operation. because k9f4g08u0m supports copy back with edc operation, only 1-bit ecc is suffici ent for copy-back operation. during copy- back operation, the system controller can detect a bit error fo r each 528-byte plane by monitoring the status bits (i/o1 & i/o 2) of the status register. there are some restrictions against programming unit in copy- back operation with edc. for enabling edc operation, the page pro- gram should be performed with the whole page unit (2,112-byte) or the each 528-byte plane unit. a page of 2,112-byte is compose d of 4 planes of 528-byte and each 528-byte plane is made up of 512- byte in the main area and 16-byte in the spare area. "a" area 512 byte (1?st plane) "h" area (4?th plane) main area (2,048 byte) 16 byte "g" area (3?rd plane) 16 byte "f" area (2?nd plane) 16 byte "e" area (1?st plane) 16 byte "b" area 512 byte (2?nd plane) "c" area 512 byte (3?rd plane) "d" area 512 byte (4?th plane) spare area (64 byte) table 2. definition of the 528-byte plane plane main area (column 0~2,047) spare area (column 2,048~2,111) area name column address area name column address 1?st 528-byte plane "a" 0 ~ 511 "e" 2,048 ~ 2,063 2?nd 528-byte plane "b" 512 ~ 1,023 "f" 2,064 ~ 2,079 3?rd 528-byte plane "c" 1,024 ~ 1,535 "g" 2,080 ~ 2,095 4?th 528-byte plane "d" 1,536 ~ 2,047 "h" 2,096 ~ 2,111 within a block, the pages must be programmed consecutively from the lsb (least significant bit) page of the block to msb (most sig- nificant bit) pages of the block. ran dom page address programming is prohibited. from the lsb page to msb page data in: data (1) data (64) (1) (2) (3) (32) (64) data register page 0 page 1 page 2 page 31 page 63 ex.) random page program (prohibition) data in: data (1) data (64) (2) (32) (3) (1) (64) data register page 0 page 1 page 2 page 31 page 63 addressing for program operation : : : :
flash memory 17 advance k9f4g08u0m k9k8g08u1m system interface using ce don?t-care. for an easier system interface, ce may be inactive during the data-loading or serial access as shown below. the internal 2,112byte data registers are utilized as separate buf fers for this operation and the system desig n gets more flexible. in addition, for v oice or audio applications which use slow cycle time on the order of u-seconds, de-activating ce during the data-loading and serial access would provide significant sa vings in power consumption. figure 4. program operation with ce don?t-care. ce we t wp t ch t cs address(5cycles) 80h data input ce cle ale we data input ce don?t-care 10h address(5cycle) 00h ce cle ale we data output(serial access) ce don?t-care r/b t r re t cea out t rea ce re i/o 0 ~ 7 figure 5. read operation with ce don?t-care. 30h i/ox i/ox
flash memory 18 advance k9f4g08u0m k9k8g08u1m command latch cycle ce we cle ale command address latch cycle t cls t cs t clh t ch t wp t als t alh t ds t dh note device i/o data address i/ox data in/out col. add1 col. add2 row add1 row add2 row add3 k9f4g08u0m i/o 0 ~ i/o 7 2,112byte a0~a7 a8~a11 a12~a19 a20~a27 a28~a29 i/ox ce we cle ale col. add1 t cs t wc t wp t als t ds t dh t alh t als t wh t wc t wp t ds t dh t alh t als t wh t wc t wp t ds t dh t alh t als t wh t ds t dh t wp i/ox col. add2 row add1 row add2 t wc t wh t alh t als t ds t dh row add3 t alh t cls
flash memory 19 advance k9f4g08u0m k9k8g08u1m input data latch cycle ce cle we din 0 din 1 din final* ale t als t clh t wc t ch t ds t dh t ds t dh t ds t dh t wp t wh t wp t wp i/ox notes : din final means 2,112 * serial access cycle after read (cle=l, we =h, ale=l) re ce r/b dout dout dout t rc t rea t rr t rhoh t rea t reh t rea t coh t rhz i/ox t chz t rhz notes : transition is measured 200mv from steady state voltage with load. this parameter is sampled and not 100% tested. trloh is valid when frequency is higher than 33mhz. trhoh starts to be valid when frequency is lower than 33mhz.
flash memory 20 advance k9f4g08u0m k9k8g08u1m status read cycle & edc status read cycle ce we cle re 70h or 7bh status output t clr t clh t wp t ch t ds t dh t rea t ir t rhoh t coh t whr t cea t cls i/ox t chz t rhz t cs re ce r/b i/ox t rr t cea t rea t rp t reh t rc t rhz t chz serial access cycle after read (edo type, cle=l, we =h, ale=l) t rhoh t coh t rloh dout dout t rea notes : transition is measured 200mv from steady state voltage with load. this parameter is sampled and not 100% tested. trloh is valid when frequency is higher than 33mhz. trhoh starts to be valid when frequency is lower than 33mhz.
flash memory 21 advance k9f4g08u0m k9k8g08u1m read operation (intercepted by ce ) ce cle r/b we ale re busy 00h dout n dout n+1 dout n+2 row address column address t wb t ar t chz t r t rr t rc 30h read operation ce cle r/b we ale re busy 00h col. add1 col. add2 row add1 dout n dout n+1 column address row address t wb t ar t r t rc t rhz t rr dout m t wc row add2 30h t clr i/ox i/ox col. add1 col. add2 row add1 row add2 row add3 row add3 t c oh
flash memory 22 advance k9f4g08u0m k9k8g08u1m random data output in a page ce cle r/b we ale re busy 00h dout n dout n+1 row address column address t w b t ar t r t rr t r c 30h 05h column address dout m dout m+1 i/ox col. add1 col. add2 row add1 row add2 col add1 col add2 row add3 t clr e0h t whr t rea t rhw
flash memory 23 advance k9f4g08u0m k9k8g08u1m page program operation ce cle r/b we ale re 80h 70h i/o 0 din n din 10h m serialdata input command column address row address 1 up to m byte serial input program command read status command i/o 0 =0 successful program i/o 0 =1 error in program t prog t wb t wc t wc t wc i/ox co.l add1 col. add2 row add1 row add2 row add3 notes : tadl is the time from the we rising edge of final address cycle to the we rising edge of first data cycle. t adl
flash memory 24 advance k9f4g08u0m k9k8g08u1m page program operation with random data input ce cle r/b we ale re 80h 70h i/o 0 din n din 10h m serial data input command column address row address serial input program command read status command t prog t wb t wc t wc 85h random data input command column address t wc din j din k serial input i/ox col. add1 col. add2 row add1 row add2 col. add1 col. add2 row add3 notes : 1. tadl is the time from the we rising edge of final address cycle to the we rising edge of first data cycle. t adl 2. for edc operation, only one time random data input is possible at the same address. t adl
flash memory 25 advance k9f4g08u0m k9k8g08u1m copy-back program operation with random data input ce cle r/b we ale re 00h i/o x 85h column address row address read edc status or read status command i/o 0 =0 successful program i/o 0 =1 error in program t prog t wb t wc busy t wb t r busy 10h copy-back data input command 35h column address row address data 1 data n i/ox col add1 col add2 row add1 row add2 col add1 col add2 row add1 row add2 row add3 row add3 7bh/70h i/o 1 ~ i/o 2 : edc status (7bh only) notes : 1. tadl is the time from the we rising edge of final address cycle to the we rising edge of first data cycle. t adl 2. for edc operation, only one time random data input is possible at hte same address.
flash memory 26 advance k9f4g08u0m k9k8g08u1m block erase operation ce cle r/b we ale re 60h erase command read status command i/o 0 =1 error in erase d0h 70h i/o 0 busy t wb t bers i/o 0 =0 successful erase row address t wc auto block erase setup command i/ox row add1 row add2 row add3
flash memory 27 advance k9f4g08u0m k9k8g08u1m two-plane page program operation 80h i/o 0 ~ 7 r/b 11h ex.) two-plane page program t dbsy address & data input 81h 10h address & data input 70h t prog col add1,2 & row add 1,2,3 2112 byte data ce cle r/b we ale re 80h din n din 11h m serial data input command column address program tdbsy twb twc command (dummy) din n 10h tprog twb i/o program confirm command (true) 81h 70h page row address i/ox 1 up to 2112 byte data serial input din m read status command t dbsy : typ. 500ns max. 1 s col add1 col add2 row add1 row add2 row add3 col add1 col add2 row add1 row add2 row add3 col add1,2 & row add 1,2,3 2112 byte data a 0 ~ a 11 : valid a 12 ~ a 17 : fixed ?low? a 18 : fixed ?low? a 19 ~ a 29 : fixed ?low? a 0 ~ a 11 : valid a 12 ~ a 17 : valid a 18 : fixed ?high? a 19 ~ a 29 : valid
flash memory 28 advance k9f4g08u0m k9k8g08u1m two-plane block erase operation block erase setup command erase confirm command read status command 2 times repeat 60h row add1,2,3 i/o 0 ~ 7 r/b 60h a 9 ~ a 25 d0h t bers * for two-plane erase operation, block address to be erased should be repeated before "d0h" command. ex.) two-plane block erase operation ce cle r/b i/o x we ale re 60h row add1 d0h 70h i/o 0 busy t wb t bers row address t wc d0h 70h address address row add1,2,3 i/o 0 = 0 successful erase i/o 1 =1 error in erase row add2 row add3 a 12 ~ a 17 : fixed ?low? a 18 : fixed ?low? a 19 ~ a 29 : fixed ?low? a 12 ~ a 17 : fixed ?low? a 18 : fixed ?high? a 19 ~ a 29 : valid
flash memory 29 advance k9f4g08u0m k9k8g08u1m read id operation ce cle we ale re 90h read id command maker code device code 00h ech device t rea address 1cycle 4th cyc.* i/ox t ar device device code*(2nd cycle) 3rd cycle* 4th cycle* k9f4g08u0m dch 10h 95h k9k8g08u1m same as each k9f4g08u0m in it code* 3rd cyc.*
flash memory 30 advance k9f4g08u0m k9k8g08u1m 4th id data description i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 i/o0 page size (w/o redundant area ) 1kb 2kb reserved reserved 0 0 0 1 1 0 1 1 block size (w/o redundant area ) 64kb 128kb 256kb reserved 0 0 0 1 1 0 1 1 redundant area size ( byte/512byte) 8 16 0 1 organization x8 x16 0 1 serial accessminimum 50ns 25ns reserved reserved 0 1 0 1 0 0 1 1 id definition table 90 id : access command = 90h description 1 st byte 2 nd byte 3 rd byte 4 th byte maker code device code internal chip number, cell type, number of simultaneously programed pages, etc page size, block size,redundant area si ze, organization, serial access minimum 3rd id data description i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 i/o0 internal chip number 1 2 4 8 0 0 0 1 1 0 1 1 cell type 2 level cell 4 level cell 8 level cell 16 level cell 0 0 0 1 1 0 1 1 number of simultaneously programmed pages 1 2 4 8 0 0 0 1 1 0 1 1 interleave program between multiple chips not support support 0 1 cache program not support support 0 1
flash memory 31 advance k9f4g08u0m k9k8g08u1m device operation page read read mode is initiated by writing 00h-30h to the command register along with five address cycles . in two consecutive read opera - tions, the second one doesn?t need 00h command, which five address cycles and 30h command initiates that operation. once the command is latched, it does not need to be written for the follo wing page read operation. two types of operations are available : ran- dom read out, serial page read out. the random read mode is enabled when the page address is changed. t he 2,112 bytes of data within the selected page are trans- ferred to the data registers in less than 20 s(t r ). the system controller can detect the comple tion of this data transfer(tr) by analyzing the output of r/b pin. once the data in a page is loaded into the data r egisters, they may be read out in 25ns cycle time by sequen- tially pulsing re . the repetitive high to low transitions of the re clock make the device output the data starting from the selected col- umn address up to the last column address. the device may output random data in a page instead of the co nsecutive sequential data by writing random data output command. the column address of next data, which is going to be out, ma y be changed to the address which follows random data output com- mand. random data output can be operated multiple time s regardless of how many times it is done in a page. figure 6. read operation address(5cycle) 00h col. add.1,2 & row add.1,2,3 data output(serial access) data field spare field ce cle ale r/b we re t r 30h i/ox
flash memory 32 advance k9f4g08u0m k9k8g08u1m figure 7. random data output in a page address 00h data output r/b re t r 30h address 05h e0h 5cycles 2cycles data output data field spare field data field spare field i/ox col. add.1,2 & row add.1,2,3 page program the device is programmed basically on a page basis, but it does allow multiple partial page programing of a word or consecutive bytes up to 2,112, in a single page program cycle. the number of consecutive partial page prog ramming operation within the same page without an intervening erase operation must not exc eed 4 times for main array(1time/512byte) and 4 times for spare array(1time/16byte). the addressing should be done in sequential order in a block. a page program cycle consists of a serial da ta loading period in which up to 2,112bytes of data may be loaded in to the data register, followed by a non-volatile programming p eriod where the loaded data is programmed into the appropriate cell. the serial data loading period begins by inputting the serial data input command(80h) , followed by the fi ve cycle address input s and then serial data loading. the words other than those to be programmed do not need to be loaded. the device supports random data input in a page. the column address for the next data, which wi ll be entered, may be changed to the address which follows rando m data input command(85h). random data input may be operated multiple times regardless of how many times it is done in a page. the page program confirm command(10h) initiates the programming process. writing 10h alone wit hout previously entering the serial data will not initiate the programming process. the internal write state controller automat ically executes the algorithm s and tim- ings necessary for program and verify, thereb y freeing the system controller for other tasks. once the program process starts, the read status register command may be entered to read the status r egister. the system controller can detect the completion of a p ro- gram cycle by monitoring the r/b output, or the status bit(i/o 6) of the status register. only the read status command and reset command are valid while programming is in progress. when the p age program is complete, the write status bit(i/o 0) may be checked(figure 8). the internal write verify detects only errors for "1"s that are no t successfully programmed to "0"s. the com mand register remains in read status command mode until an other valid command is written to the command register. figure 8. program & read status operation 80h r/b address & data input i/o 0 pass data 10h 70h fail t prog i/ox col. add.1,2 & row add.1,2,3 "0" "1" col. add.1,2
flash memory 33 advance k9f4g08u0m k9k8g08u1m figure 9. random data input in a page 80h r/b address & data input i/o 0 pass 10h 70h fail t prog 85h address & data input i/ox col. add.1,2 & row add1,2,3 col. add.1,2 data data "0" "1" copy-back program the copy-back program is configured to qu ickly and efficiently rewrite data stored in one page without utilizing an external me mory. since the time-consuming cycles of serial access and re-loading cycles ar e removed, the system performance is improved. the ben - efit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly a ssigned free block. the operation for performing a copy-back program is a sequential execution of page-read without serial access and c opy- ing-program with the address of destination page. a read operati on with "35h" command and the address of the source page moves the whole 2,112-byte data into the internal data buffer. as so on as the device returns to ready state, page-copy data-input com - mand (85h) with the address cycles of destination page followed may be written. the program confirm command (10h) is required t o actually begin the programming operation. during tprog, the device executes edc of itself. once the program process starts, the read status register command (70h) or read edc status command (7bh) may be entered to read the status register. the system controller can detect the completion of a program cycle by monitoring the r/b output, or the status bit(i/o 6) of the status register. when the copy-back program is complete, the write status bit(i/o 0) and edc status bits (i/o 1 ~ i/o 4) may be checked(figure 10 & figure 11& figure 12). the internal write verification detects on ly errors for "1"s that are not successfully programmed to " 0"s and the internal edc checks whether there is only 1-bit error for each 528-byte plane of the source page. more than 2-bit error det ection is not available for each 528-byte plane. t he command register remains in read status command mode or read edc status com- mand mode until another valid command is written to the command register. during copy-back program, data modification is possible using random data input comma nd (85h) as shown in figure11. but edc status bits are not available during copy back for some bits or bytes modified by random data input operation. however, in case of the 528 byte plane unit modification, edc status bits are abailable. figure 10. page copy-back program operation 00h r/b add.(5cycles) i/o 0 pass 85h 70h fail t prog add.(5cycles) t r source address destination address 35h 10h i/ox col. add.1,2 & row add.1,2,3 col. add.1,2 & row add.1,2,3 figure 11. page copy-back program operation with random data input 00h r/b add.(5cycles) 85h 70h t prog add.(5cycles) t r source address destination address data 35h 10h 85h data add.(2cycles) there is no limitation for the number of repetition. i/ox col. add.1,2 & row add.1,2,3 col. add.1,2 & row add.1,2,3 col. add.1,2 note: 1. for edc operation, only one time random data input is possible at the same address. note : 1. copy-back program operation is allo wed only within the same memory plane. 2. on the same plane, it?s prohibited to operate copy-back program from an odd address page(source page) to an even address page(target page) or from an even address page(source page) to an odd address page(target page). therefore, the copy-back program is per mitted just between odd address pages or even address pages.
flash memory 34 advance k9f4g08u0m k9k8g08u1m figure 12. page copy-back program operation with edc & read edc status 00h r/b add.(5cycles) 85h 7bh t prog add.(5cycles) t r source address destination address 35h 10h i/ox col. add.1,2 & row add.1,2,3 col. add.1,2 & row add.1,2,3 edc status output figure 13. block erase operation block erase the erase operation is done on a block basis. bl ock address loading is accompli shed in three cycles initiated by an erase setup command(60h). only address a 18 to a 29 is valid while a 12 to a 17 is ignored. the erase confirm command(d0h) following the block address loading initiates the internal erasi ng process. this two-step sequence of se tup followed by execution command ensures t hat memory contents are not accidentally er ased due to external noise conditions. at the rising edge of we after the erase confirm command input, the internal write controller handles er ase and erase-verify. when the erase operation is completed, the write status bit( i/o 0) may be checked. figure 13 details the sequence. 60h row add 1,2,3 r/b address input(3cycle) i/o 0 pass d0h 70h fail t bers i/ox "0" "1" edc operation note that the user who use copy-back with edc mode, only one time random data input is possible at the same address during copy-back program or page program mode. fo r the user who use copy-back without edc, there is no limitation for the random data input at the same address. two-plane page program two-plane page program is an extension of page program, for a sing le plane with 2112 byte page registers. since the device is equipped with two memory planes, activating the two sets of 2112 byte page regi sters enables a simultaneous programming of two pages. after writing the first set of data up to 2112 byte into the selected page register, dummy page program command (11h) instead o f actual page program (10h) is inputted to finish data-loading of the first plane. since no progra mming process is involved, r/b remains in busy state for a short period of time(tdbsy). r ead status command (70h) may be issued to find out when the device returns to ready state by polling the ready/busy status bit(i/o 6). then the next set of data for the other plane is inputted a fter the 81h command and address sequences. after inputting data for the la st plane, actual true page program(10h) instead of dummy page program command (11h) must be followed to star t the programming process. the operation of r/b and read status is the same as that of page program. althougth two planes are progra mmed simultaneously, pass/fail is not available for each page when the program operation completes. status bit of i/o 0 is set to "1" when any of the pages fails. restriction in addressing with two-pl ane page program is shown is figure14.
flash memory 35 advance k9f4g08u0m k9k8g08u1m figure 14. two-plane page program 80h 11h data input plane 0 (2048 block) block 0 block 2 block 4094 block 4092 80h i/o 0 ~ 7 r/b address & data input 11h 81h 10h t dbsy t prog 70h address & data input note : it is noticeable that same row address except for a 18 is applied to the two blocks 81h 10h plane 1 (2048 block) block 1 block 3 block 4095 block 4093 figure 15. two-plane block erase operation 60h i/o x r/b 60h d0h i/o pass fail t bers address (3 cycle) address (3 cycle) 70h "0" "1" a 12 ~ a 17 : fixed ?low? a 18 : fixed ?low? a 19 ~ a 29 : fixed ?low? a 12 ~ a 17 : fixed ?low? a 18 : fixed ?high? a 19 ~ a 29 : valid two-plane block erase basic concept of two-plane block erase operati on is identical to that of two-plane p age program. up to two blocks, one from eac h plane can be simultaneously erased. standard block erase comm and sequences (block erase setup command(60h) followed by three address cycles) may be repeated up to twice for erasing up to two blocks. only one block should be selected from each pla ne. the erase confirm command(d0h) initiates the actual erasi ng process. the completion is detected by monitoring r/b pin or ready/ busy status bit (i/o 6). a 0 ~ a 11 : valid a 12 ~ a 17 : fixed ?low? a 18 : fixed ?low? a 19 ~ a 29 : fixed ?low? a 0 ~ a 11 : valid a 12 ~ a 17 : valid a 18 : fixed ?high? a 19 ~ a 29 : valid
flash memory 36 advance k9f4g08u0m k9k8g08u1m figure 16. two-plane copy-back program operation r/b 85h 70h t prog add.(5cycles) destination address 10h i/ox col. add.1,2 & row add.1,2,3 81h add.(5cycles) destination address col. add.1,2 & row add.1,2,3 00h r/b add.(5cycles) t r source address on plane0 35h i/ox col. add.1,2 & row add.1,2,3 00h add.(5cycles) source address on plane1 35h col. add.1,2 & row add.1,2,3 t r 11h t dbsy two-plane copy-back page program two-plane copy-back page program is an extension of copy-back pr ogram, for a single plane with 2112 byte page registers. since the device is equipped with two memory pla nes, activating the two sets of 2112 by te page registers enables a simultaneous pro- gramming of two pages. data field spare field data field spare field (1) (2) (3) (3) plane0 plane1 source page target page source page target page (1) : read copy back on plane0 (2) : read copy back on plane1 (3) : two-plane copy-back page program a 0 ~ a 11 : fixed ?low? a 12 ~ a 17 : fixed ?low? a 18 : fixed ?low? a 19 ~ a 29 : fixed ?low? a 0 ~ a 11 : fixed ?low? a 12 ~ a 17 : valid a 18 : fixed ?high? a 19 ~ a 29 : valid 1 1 note : 1. copy-back program operation is allo wed only within the same memory plane. 2. on the same plane, it?s prohibited to operate copy-back program from an odd address page(source page) to an even address page(target page) or from an even address page(source page) to an odd address page(target page). therefore, the copy-back program is per mitted just between odd address pages or even address pages.
flash memory 37 advance k9f4g08u0m k9k8g08u1m r/b 85h 11h t dbsy add.(5cycles) data 85h data i/ox col. add.1,2 & row add.1,2,3 col. add.1,2 add.(2cycles) 00h r/b add.(5cycles) t r source address on plane0 35h i/ox col. add.1,2 & row add.1,2,3 00h add.(5cycles) source address on plane1 35h col. add.1,2 & row add.1,2,3 t r 1 r/b 85h 10h t prog add.(5cycles) data 85h data i/ox col. add.1,2 & row add.1,2,3 col. add.1,2 add.(2cycles) 1 2 2 destination address a 0 ~ a 11 : valid a 12 ~ a 17 : fixed ?low? a 18 : fixed ?low? a 19 ~ a 29 : fixed ?low? destination address a 0 ~ a 11 : valid a 12 ~ a 17 : valid a 18 : fixed ?high? a 19 ~ a 29 : valid figure 17. two-plane copy-back program operation with random data input note : 1. copy-back program operation is allowed only within the same memory plane. 2. on the same plane, it?s prohibited to operat e copy-back program from an odd address page(source page) to an even address page(target page) or from an even address page(source page) to an odd address page(target page). therefore, the copy-back program is permitted just between odd address pages or even address pages. 3. edc status bits are not available during copy back for some bits or bytes modified by random data input operation. in case of the 528 byte plane unit modification, edc stat us bits are abailable
flash memory 38 advance k9f4g08u0m k9k8g08u1m read status the device contains a status register whic h may be read to find out whether program or erase operation is completed, and whethe r the program or erase operation is completed successfully. af ter writing 70h command to the co mmand register, a read cycle outpu ts the content of the status register to the i/o pins on the falling edge of ce or re , whichever occurs last. th is two line control allows the system to poll the progress of each device in multiple memory connections even when r/b pins are common-wired. re or ce does not need to be toggled for updated status. refer to table 3 fo r specific status register definitions. the command register remains in status read mode until further commands are issued to i t. therefore, if the status register is read during a random read cycle, the read command(00h) should be given before starting read cycles. table 3. staus register definition for 70h command note : 1. i/os defined ?not use? are recommended to be masked out when read status is being executed. i/o page program block erase read definition i/o 0 pass/fail pass/fail not use pass : "0" fail : "1" i/o 1 not use not use not use don?t -cared i/o 2 not use not use not use don?t -cared i/o 3 not use not use not use don?t -cared i/o 4 not use not use not use don?t -cared i/o 5 not use not use not use don?t -cared i/o 6 ready/busy ready/busy ready/busy busy : "0" ready : "1" i/o 7 write protect write protect w rite protect protected : "0" not protected : "1" read edc status read edc status operation is only available on ?copy back program?. the device c ontains a edc status register which may be read to find out whether there is error during ?read for copy back?. after writing 7bh command to the command register, a read cycle outputs the content of the edc status regist er to the i/o pins on the falling edge of ce or re , whichever occurs last. this two line control allows the system to poll the progress of eac h device in multiple memo ry connections even when r/b pins are common-wired. re or ce does not need to be toggled for updated status. refer to table 4 for specific status register definitions. the command reg- ister remains in edc status read mode until further commands are issued to it. table 4. status register definition for 7bh command note : 1. i/os defined ?not use? are recommended to be masked out when read status is being executed. 2. more than 2-bit erro r detection isn?t availabl e for each 528b plane. that is to say, onl y 1-bit error detection is avaliable for each 528b plane. i/o copy back program page program block erase read definition i/o 0 pass/fail of copy back program pass/fa il pass/fail not use pass : "0", fail : "1" i/o 1 edc status not use not use not use no error : "0", error : "1" i/o 2 validity of edc status not use not use not use valid : "1", invalid : "0" i/o 3 not use not use not use not use don?t -cared i/o 4 not use not use not use not use don?t -cared i/o 5 not use not use not use not use don?t -cared i/o 6 ready/busy of copy back program ready/busy ready/busy ready/busy busy : "0", ready : "1" i/o 7 write protect of copy back program write protect write protect write protect protected : "0", not protected :"1"
flash memory 39 advance k9f4g08u0m k9k8g08u1m figure 18. read id operation ce cle i/o x ale re we 90h 00h address. 1cycle maker code device code t cea t ar t rea read id the device contains a product identification mode, initiated by wr iting 90h to the command register, followed by an address inp ut of 00h. five read cycles sequentially output the manufacturer code(ech) , and the device code and 3rd, 4th cycle id respectively. the command register remains in read id mode until further comm ands are issued to it. figure 18 shows the operation sequence. device 4th cyc.* figure 19. reset operation reset the device offers a reset feature, executed by writing ffh to t he command register. when the device is in busy state during ran dom read, program or erase mode, the reset operation will abort these operations. the contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased. the command register is cleared to wait for the next command, and the status register is cleared to value c0h when wp is high. if the device is already in reset state a new reset command will be accepted by the command register. the r/b pin changes to low for trst after the reset command is written. refer to figure 19 below. ffh i/o x r/b t rst t whr t clr code* device device code*(2nd cycle) 3rd cycle* 4th cycle* k9f4g08u0m dch 10h 95h k9k8g08u1m same as each k9f4g08u0m in it ech 3rd cyc.*
flash memory 40 advance k9f4g08u0m k9k8g08u1m ready/busy the device has a r/b output that provides a hardware method of indicating the completion of a page program, erase and random read completion. the r/b pin is normally high but transitions to low after pr ogram or erase command is written to the command regis- ter or random read is started after address loading. it returns to high when the internal contro ller has finished the operation . the pin is an open-drain driver thereby allowing two or more r/b outputs to be or-tied. because pull-up resistor value is related to tr(r/b ) and current drain during busy(ibusy) , an appropriate value can be obt ained with the following reference chart(fig.20). its value can be determined by the following guidance. v cc r/b open drain output device gnd rp tr,tf [s] ibusy [a] rp(ohm) figure 20. rp vs tr ,tf & rp vs ibusy ibusy tr ibusy busy ready vcc @ vcc = 3.3v, ta = 25 c , c l = 50pf voh tf tr 1k 2k 3k 4k 50n 100n 150n 3m 2m 1m 50 tf 100 150 200 1.8 1.8 1.8 1.8 2.4 1.2 0.8 0.6 vol where i l is the sum of the input currents of all devices tied to the r/b pin. rp value guidance rp(max) is determined by maximum permissible limit of tr rp(min, 3.3v part) = v cc (max.) - v ol (max.) i ol + i l = 3.2v 8ma + i l 3.3v device - v ol : 0.4v, v oh : 2.4v c l
flash memory 41 advance k9f4g08u0m k9k8g08u1m data protection & power up sequence the device is designed to offer protection from any involuntar y program/erase during power-transitions. an internal voltage det ector disables all functi ons whenever vcc is below about 2v. wp pin provides hardware protection a nd is recommended to be kept at v il during power-up and power-down. a recovery time of minimum 10 s is required before internal ci rcuit gets ready for any command sequences as shown in figure 21. the two step command sequence fo r program/erase provides additional software protection. figure 21. ac waveforms for power transition v cc wp high we 3.3v device : ~ 2.5v 3.3v device : ~ 2.5v 10 s

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